Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
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DOI: 10.1016/j.microrel.2021.114255
Abstract: This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and… read more here.
Keywords: gan hemts; charge trapping; negative charge; trapping gan ... See more keywords