Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2
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DOI: 10.1109/ted.2024.3351599
Abstract: We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with ferroelectric Hf0.5Zr0.5O2/SiO2 gate stacks by split ${I}$ – ${V}$ measurement. We find that the recombination of electrons and holes within the… read more here.
Keywords: trapping induced; generation; charge trapping; fefet ferroelectric ... See more keywords