Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4
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DOI: 10.1007/s40042-021-00154-7
Abstract: Atomically thin two-dimensional (2D) materials have emerged as promising candidates for flexible and transparent electronic applications. Here, we introduce non-volatile charge trapping memory devices, based on the 2D heterostructure field-effect transistor consisting of a few-layer… read more here.
Keywords: trapping memory; memory device; memory; charge trapping ... See more keywords