Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory
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DOI: 10.3390/nano8100799
Abstract: High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory… read more here.
Keywords: nano layers; charge trapping; trapping nano; flash memory ... See more keywords