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Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3034561
Abstract: Impact of surface traps on the breakdown characteristics of AlGaN/GaN HEMT devices is revealed using detailed TCAD computations and supporting experiments. Detailed mechanism explaining the role of surface traps in modulating channel electric field under…
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Keywords:
breakdown characteristics;
surface;
characteristics algan;
traps breakdown ... See more keywords