TFET inverter static and transient performances in presence of traps and localized strain
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DOI: 10.1016/j.sse.2019.03.051
Abstract: Abstract This paper investigates the digital circuit-level performance of an inverter realised with n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/ Al 0.05 Ga 0.95 Sb tech nology platform in the… read more here.
Keywords: presence; transient; performance; traps localized ... See more keywords