Robust quantum point contact via trench gate modulation
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-76790-z
Abstract: Quantum point contacts (QPC) are a primary component in mesoscopic physics and have come to serve various purposes in modern quantum devices. However, fabricating a QPC that operates robustly under extreme conditions, such as high… read more here.
Keywords: trench gate; qpc; quantum point;
A new RF trench-gate multi-channel laterally-diffused MOSFET on InGaAs
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/38/9/094001
Abstract: In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET (TGMC-LDMOS) on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate… read more here.
Keywords: gate multi; multi; trench gate; channel laterally ... See more keywords
Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Access"
DOI: 10.1109/access.2024.3377563
Abstract: In this article, enhancement-mode (E-mode) operation is achieved by employing a trench gate on the $\beta $ -Ga2O3 current aperture vertical MOSFETs via Sentaurus TCAD simulation. The performance of the trench gate $\beta $ -Ga2O3… read more here.
Keywords: trench gate; tex math; inline formula;
Breakdown Voltage Walk-in Phenomenon and Optimization for the Trench-Gate p-Type VDMOS Under Single Avalanche Stress
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2988860
Abstract: An anomalous breakdown voltage (BV) walk-in phenomenon of the trench-gate p-type vertical double-diffused metal–oxide–semiconductor (VDMOS) after single avalanche stress has been experimentally investigated. It is found that the BV of the VDMOS is decreased after… read more here.
Keywords: trench gate; gate type; avalanche stress; single avalanche ... See more keywords
Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3011644
Abstract: The complete avalanche process of the trench-gate filed-stop insulated gate bipolar transistor (FS-IGBT) is first investigated based on an infrared visualization technology called step-control infrared thermography method. By this method, the details about the generation,… read more here.
Keywords: trench gate; avalanche; method; avalanche process ... See more keywords
Investigation of Inrush Current Induced Trench Gate Degradation Inside SiC Mosfet by New Fowler–Nordheim Localization Methodology
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2023.3348871
Abstract: In this letter, an inrush current degradation mechanism of trench gate inside silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (Mosfet) is investigated in depth under different turn-off VGS. The preconditioning is introduced to guarantee the accuracy of… read more here.
Keywords: methodology; degradation; inrush current; sub ... See more keywords
Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15020457
Abstract: The variations in the degradation of electrical characteristics resulting from different device structures for trench-gate SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated in this work. Two types of the most advanced commercial trench products,… read more here.
Keywords: trench gate; different device; avalanche; device ... See more keywords
Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13030531
Abstract: In order to detect biomolecules, a biosensor based on a dielectric-modulated stacked source trench gate tunnel field effect transistor (DM-SSTGTFET) is proposed. The stacked source structure can simultaneously make the on-state current higher and the… read more here.
Keywords: trench gate; sensitivity; stacked source;