A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage
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DOI: 10.1088/1361-6641/abf909
Abstract: The performance of a superjunction trench-insulated gate bipolar transistor with variable vertical doping in the epitaxial region along with variation in the collector layer is investigated. The concept of vertical variation transfers the avalanche multiplication… read more here.
Keywords: voltage; bipolar transistor; insulated gate; trench insulated ... See more keywords