Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration
Sign Up to like & getrecommendations! Published in 2017 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927617007978
Abstract: Non-planar semiconductor devices, such asvertical f in-based field-effect transistor (finFET) device, h ave become a viable technology for 22nm node and beyond [1-4]. However, finFET device fabrication faces new challenges and process variation control become… read more here.
Keywords: integration; shallow trench; finfet; spectroscopy ... See more keywords
Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2798295
Abstract: Two radiation hardening processes for shallow trench isolation (STI), i.e., Si+ implantation and STI oxide nitridation are investigated, including the impact on nominal electrical characteristics and radiation hardness. The total ionizing dose effects of the… read more here.
Keywords: radiation hardening; process; shallow trench; trench isolation ... See more keywords