Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
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DOI: 10.1109/led.2019.2908253
Abstract: The reliability of gate dielectrics is one of the key issues in SiC Trench MOSFET. While reducing the gate oxide electric field in OFF state through dedicated shielding structures by various designs, JFET resistances are… read more here.
Keywords: tex math; trench mosfet; inline formula;
SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2767904
Abstract: A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode… read more here.
Keywords: protection; schottky barrier; sic trench; level protection ... See more keywords