Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.03.027
Abstract: Abstract The effective mobility in 4H-SiC trench metal-oxidesemiconductor field-effect transistors (MOSFETs) with an n-channel region on the 1 1 - 00 face, corresponding to the trench sidewalls, is investigated. Using a previously proposed mobility model,… read more here.
Keywords: mobility; effective mobility; scattering mobility; mobility sic ... See more keywords
Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15020598
Abstract: In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench… read more here.
Keywords: sic trench; trench mosfets; failure; short circuit ... See more keywords