Photo from wikipedia
Sign Up to like & get
recommendations!
2
Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00400-w
Abstract: In this work, a threshold voltage model of Tri-Gate Schottky-Barrier (TGSB) MOSFET is presented by coupling threshold voltage models of symmetric and asymmetric double-gate Schottky-Barrier (SB) MOSFET structures giving due weight to each structure. The…
read more here.
Keywords:
voltage;
schottky barrier;
tri gate;
threshold voltage ... See more keywords
Photo from wikipedia
Sign Up to like & get
recommendations!
1
Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.02.006
Abstract: Abstract The self-heating effects (SHEs) for Vacuum Gate Dielectric (VGD) tri-gate FinFET compared with High-k (HK) Dielectric tri-gate FinFET were investigated here based on 3D numerical electro-thermal TCAD simulation method. Simulation results show that VGD…
read more here.
Keywords:
gas;
heating effects;
self heating;
tri gate ... See more keywords
Photo from wikipedia
Sign Up to like & get
recommendations!
1
Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5012866
Abstract: This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop…
read more here.
Keywords:
schottky barrier;
tri gate;
barrier diodes;
slanted tri ... See more keywords
Photo from wikipedia
Sign Up to like & get
recommendations!
0
Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab607d
Abstract: The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique bulk conduction mechanism of JLTs…
read more here.
Keywords:
low field;
tri gate;
accurate determination;
field mobility ... See more keywords
Photo from wikipedia
Sign Up to like & get
recommendations!
0
Published in 2017 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2016.2628967
Abstract: This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when…
read more here.
Keywords:
tri gate;
gate;
sensitivity;
dibl characteristics ... See more keywords
Photo from academic.microsoft.com
Sign Up to like & get
recommendations!
1
Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3040239
Abstract: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel…
read more here.
Keywords:
vertical power;
tri gate;
gate mosfet;
power ... See more keywords
Photo from wikipedia
Sign Up to like & get
recommendations!
1
Published in 2019 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2019.2906567
Abstract: This paper proposes the substrate bias voltage dependent subthreshold models of channel potential, threshold voltage, current, drain induced barrier lowering, and subthreshold swing for tri-gate silicon-on-insulator (SOI) MOSFETs (TG-MOSFETs). The substrate induced surface potential effect…
read more here.
Keywords:
soi mosfets;
subthreshold characteristic;
tri gate;
substrate bias ... See more keywords