Articles with "tri gate" as a keyword



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Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs)

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Published in 2020 at "Silicon"

DOI: 10.1007/s12633-020-00400-w

Abstract: In this work, a threshold voltage model of Tri-Gate Schottky-Barrier (TGSB) MOSFET is presented by coupling threshold voltage models of symmetric and asymmetric double-gate Schottky-Barrier (SB) MOSFET structures giving due weight to each structure. The… read more here.

Keywords: voltage; schottky barrier; tri gate; threshold voltage ... See more keywords
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Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

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Published in 2019 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2019.02.006

Abstract: Abstract The self-heating effects (SHEs) for Vacuum Gate Dielectric (VGD) tri-gate FinFET compared with High-k (HK) Dielectric tri-gate FinFET were investigated here based on 3D numerical electro-thermal TCAD simulation method. Simulation results show that VGD… read more here.

Keywords: gas; heating effects; self heating; tri gate ... See more keywords
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2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

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Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5012866

Abstract: This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop… read more here.

Keywords: schottky barrier; tri gate; barrier diodes; slanted tri ... See more keywords
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Accurate determination of low-field mobility in tri-gate junctionless transistors

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Published in 2020 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ab607d

Abstract: The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique bulk conduction mechanism of JLTs… read more here.

Keywords: low field; tri gate; accurate determination; field mobility ... See more keywords
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Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations

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Published in 2017 at "IEEE Journal of the Electron Devices Society"

DOI: 10.1109/jeds.2016.2628967

Abstract: This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when… read more here.

Keywords: tri gate; gate; sensitivity; dibl characteristics ... See more keywords
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The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC

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Published in 2020 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2020.3040239

Abstract: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel… read more here.

Keywords: vertical power; tri gate; gate mosfet; power ... See more keywords
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Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced Effects

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Published in 2019 at "IEEE Transactions on Nanotechnology"

DOI: 10.1109/tnano.2019.2906567

Abstract: This paper proposes the substrate bias voltage dependent subthreshold models of channel potential, threshold voltage, current, drain induced barrier lowering, and subthreshold swing for tri-gate silicon-on-insulator (SOI) MOSFETs (TG-MOSFETs). The substrate induced surface potential effect… read more here.

Keywords: soi mosfets; subthreshold characteristic; tri gate; substrate bias ... See more keywords