Semipolar ($$ 1\bar{1}01 $$11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
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DOI: 10.1007/s10853-019-03473-0
Abstract: The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped… read more here.
Keywords: light emitting; ingan; 100 substrate; ingan gan ... See more keywords