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Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2945335
Abstract: In this letter, a 4.5kV high-di/dt insulated gate trigger thyristor (IGTT) with high-efficiency injection is proposed, in which, bottom-punched N-well combined with thick high-doping P+-anode is implemented to enhance the excess carrier injection of both…
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Keywords:
trigger thyristor;
high efficiency;
injection;
insulated gate ... See more keywords