New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
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DOI: 10.1016/j.spmi.2019.05.016
Abstract: Abstract An accurate two dimensional subthreshold modeling of Germanium based Dual Halo Gate stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is proposed for the first time in this paper. The model is… read more here.
Keywords: triple material; material surrounding; halo; surrounding gate ... See more keywords