Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula
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DOI: 10.1109/access.2020.3047498
Abstract: In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by extending a one-dimensional case of the Landauer-Büttiker formula. Here, the GaN NWs are considered… read more here.
Keywords: electrical behaviors; ttiker formula; landauer ttiker;