A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction
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DOI: 10.1016/j.spmi.2019.01.002
Abstract: Abstract In this study, a novel GaN-based lateral Schottky barrier diode (SBD) with a thin upward graded AlGaN (TUG-AlGaN) barrier layer is proposed and investigated. The TUG-AlGaN layer upward graded from 0 to 0.50 mol fraction… read more here.
Keywords: sbd; heterojunction; novel gan; gan based ... See more keywords