Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design | NIST
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DOI: 10.1103/physrevapplied.9.044041
Abstract: Jason D. Hoffman, Stephen M. Wu, Brian J. Kirby, and Anand Bhattacharya Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA NIST Center for Neutron… read more here.
Keywords: antiferromagnetic resistive; memory oxide; resistive memory; tunable noncollinear ... See more keywords