Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors
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DOI: 10.1016/j.mssp.2016.10.048
Abstract: Abstract The tunnel field-effect transistor (TFET), which utilises the band-to-band tunnelling mechanism for current conduction, provides the ability to achieve extremely low subthreshold swing ( read more here.
Keywords: modelling doping; tunnel; nanowire tunnel; tunnel fets ... See more keywords