Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/aca618
Abstract: Tunnel field-effect transistors (TFETs) have garnered great interest as an option for the replacement of metal–oxide–semiconductor field-effect transistors owing to their extremely low off-current and fast switching suitable for low-power-consumption applications. However, conventional doped TFETs… read more here.
Keywords: field effect; tunnel field; bilayer; field ... See more keywords
Impact of device engineering on analog/RF performances of tunnel field effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa66bd
Abstract: The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain… read more here.
Keywords: tunnel field; gate; analog; tfet ... See more keywords
Wind Tunnel and Field Evaluation of Trapping Efficiency of Semiochemical Baited Camera-Traps for Capturing Codling Moth (Lepidoptera: Tortricidae)
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Economic Entomology"
DOI: 10.1093/jee/toac132
Abstract: Abstract Sex pheromone baited monitoring traps are a critical tool for integrated pest management decisions against many insects, particularly codling moths (Cydia pomonella L.). The addition of cameras for remote monitoring has the potential to… read more here.
Keywords: tunnel field; wind tunnel; trap; trapping efficiency ... See more keywords
Design of bilayer graphene nanoribbon tunnel field effect transistor
Sign Up to like & getrecommendations! Published in 2021 at "Circuit World"
DOI: 10.1108/cw-05-2020-0079
Abstract: Purpose The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs). Design/methodology/approach To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel… read more here.
Keywords: tunnel field; effect transistor; tfet; field effect ... See more keywords
Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors`
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2835501
Abstract: Dopant pockets in combination with a III–V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents ( ${I} _{\mathrm{ ON}}$ ) and to break the ${I} _{\mathrm{ ON}}$… read more here.
Keywords: tunnel field; dopant pockets; tex math; effect transistors ... See more keywords
Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3025266
Abstract: Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control. In this article, using two-dimensional device simulations, we propose… read more here.
Keywords: field effect; tunnel field; gate; function ... See more keywords
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2764873
Abstract: We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors (TFETs) by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is… read more here.
Keywords: subthreshold swing; tunnel field; band; tex math ... See more keywords
Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2898403
Abstract: An L-shaped tunnel field-effect transistor (LTFET) employs an overlapped gate/channel/source architecture to maximize band-to-band tunneling (BTBT) area. The overlapped channel is very thin and suffers from the geometrical quantum confinement effect (QCE). The analysis of… read more here.
Keywords: field effect; band; tunnel field; effect ... See more keywords
Covered Source–Channel Tunnel Field-Effect Transistors With Trench Gate Structures
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2018.2882859
Abstract: We propose a new design for covered source–channel tunnel field-effect transistors (CSC-TFETs) with trench gate structures. The I–V characteristics, on/off current ratio, subthreshold swing, and band-to-band tunneling rate are analyzed using a commercial device simulator.… read more here.
Keywords: effect transistors; channel tunnel; tunnel field; field effect ... See more keywords