A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices
Sign Up to like & getrecommendations! Published in 2017 at "Silicon"
DOI: 10.1007/s12633-017-9648-4
Abstract: In this paper, a theoretical model to estimate the tunneling current density of ultra-thin MOS devices is presented. First an ideal barrier has been assumed for the modeling. Then development in the results is brought… read more here.
Keywords: barrier; ultra thin; mos devices; model ... See more keywords
Towards observer-based tunneling current calibration in an experimental STM device.
Sign Up to like & getrecommendations! Published in 2020 at "IFAC-PapersOnLine"
DOI: 10.1016/j.ifacol.2020.12.559
Abstract: In the context of experimental modeling for a Scanning Tunneling Microscope (STM) prototype, a reduced order observer is proposed for parameter adaptation in the tunneling current model. The underlying dynamical model is first recalled, and… read more here.
Keywords: stm; tunneling current; towards observer; based tunneling ... See more keywords
Resonant tunneling device from multiple graphene/h-BN heterostructures
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.05.048
Abstract: Abstract We demonstrate how the tunneling current can be amplified in a vertical graphene/h-BN heterostructure device. The doping concentration of the graphene layers is designed in such a way that the Dirac points line up,… read more here.
Keywords: tunneling device; graphene; device multiple; tunneling current ... See more keywords
Tunneling current in w-GaN/AlN(0001) structures with deep-level defects
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.034
Abstract: Abstract The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of… read more here.
Keywords: deep level; level; defects tunneling; aln ... See more keywords
Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions
Sign Up to like & getrecommendations! Published in 2021 at "Nature Communications"
DOI: 10.1038/s41467-021-22774-0
Abstract: Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple… read more here.
Keywords: atomically precise; modulation; charge transport; precise graphene ... See more keywords
Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4981891
Abstract: A metal-insulator-semiconductor (MIS) tunneling diode is a very promising sensor due to its deep depletion phenomenon. The coupling effect between two adjacent devices is therefore of importance. To study the MIS deep-depletion tunneling current coupling… read more here.
Keywords: schottky barrier; deep depletion; barrier height; mis ... See more keywords
Investigation of tunneling current and local contact potential difference on the TiO2(110) surface by AFM/KPFM at 78 K.
Sign Up to like & getrecommendations! Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa5aef
Abstract: We propose a new multi-image method for obtaining the frequency shift, tunneling current and local contact potential difference (LCPD) on a TiO2(110) surface with atomic resolution. The tunneling current image reveals rarely observed surface oxygen… read more here.
Keywords: current local; image; local contact; surface ... See more keywords
Tunneling Current Through a Double Quantum Dots System
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3190617
Abstract: Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independently controlled by… read more here.
Keywords: system; quantum dots; quantum; tunneling current ... See more keywords
Superexchange Nonresonant Tunneling Current across a Molecular Wire
Sign Up to like & getrecommendations! Published in 2018 at "JETP Letters"
DOI: 10.1134/s0021364018170101
Abstract: A modified superexchange model for the formation of nonresonant tunnel current through a molecular wire consisting of a regular chain and terminal units is developed. Under conditions of weak mixing of the localized terminal molecular… read more here.
Keywords: tunneling current; model; superexchange model; molecular wire ... See more keywords