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Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.05.048
Abstract: Abstract We demonstrate how the tunneling current can be amplified in a vertical graphene/h-BN heterostructure device. The doping concentration of the graphene layers is designed in such a way that the Dirac points line up,…
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Keywords:
tunneling device;
graphene;
device multiple;
tunneling current ... See more keywords