Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels
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DOI: 10.1109/ted.2018.2840436
Abstract: Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL)… read more here.
Keywords: single layer; tunneling fets; band; band band ... See more keywords