Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.
Sign Up to like & getrecommendations! Published in 2017 at "Small"
DOI: 10.1002/smll.201701478
Abstract: The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect… read more here.
Keywords: field effect; effect transistor; tunneling field;
Low frequency noise in tunneling field effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.008
Abstract: Abstract An analytical model is developed for the fluctuation of the electrostatic potential induced by a charged trap in the gate oxide in tunneling field effect transistor (TFET). The model is applied to get the… read more here.
Keywords: frequency; noise; frequency noise; tunneling field ... See more keywords
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.01.003
Abstract: Abstract In this study, we have demonstrated 3D fin-structured channel Silicon-On-Insulator (SOI) tunneling field effect transistor (TFET) to enhance transistor on-current (Ion) by reducing leakage current and enhancing gate controllability. By comparing with planar TFET,… read more here.
Keywords: field effect; electrical characteristics; tunneling field; channel ... See more keywords
Complementary Black Phosphorus Tunneling Field-Effect Transistors.
Sign Up to like & getrecommendations! Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.8b06441
Abstract: Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low-power integration circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) and have been demonstrated to overcome the thermionic limit, which results intrinsically in sub-threshold swings… read more here.
Keywords: effect transistors; field effect; black phosphorus; tunneling field ... See more keywords
Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep41142
Abstract: We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through… read more here.
Keywords: silicon vertical; core shell; nanowire; tunneling field ... See more keywords
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4996109
Abstract: The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical… read more here.
Keywords: tunneling paths; gate normal; tunneling field; effect transistors ... See more keywords
A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2864581
Abstract: In this combined experiment and simulation study we investigate a SiGe/Si based gatenormal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is… read more here.
Keywords: dual metal; gate; effect; metal gate ... See more keywords
The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3022004
Abstract: The impact of a single displacement defect on the performance of tunneling field-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point… read more here.
Keywords: effect transistors; single displacement; impact single; field effect ... See more keywords