Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5064837
Abstract: Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as… read more here.
Keywords: gate tunneling; gate; tunneling layer; floating gate ... See more keywords
Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3032973
Abstract: Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling layer were studied in this work. The programming speeds of poly-Ge tri-gate JL flash device with GeOx/Al2O3/SiO2 tunneling… read more here.
Keywords: sub sub; sub; memory; tunneling layer ... See more keywords
A Novel Low On−State Resistance Si/4H−SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero−Transfer Mechanism
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13050778
Abstract: In this study, we propose a novel silicon (Si)/silicon carbide (4H−SiC) heterojunction vertical double−diffused MOSFET with an electron tunneling layer (ETL) (HT−VDMOS), which improves the specific on−state resistance (RON), and examine the hetero−transfer mechanism by… read more here.
Keywords: vdmos; electron tunneling; resistance; sic heterojunction ... See more keywords