Impact of P/E Stress on Trap Profiles in Bandgap-engineered Tunneling Oxide of 3D NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3182397
Abstract: The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and… read more here.
Keywords: stress; nand flash; tunneling oxide; bandgap engineered ... See more keywords
Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15186285
Abstract: Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k… read more here.
Keywords: hfo2 al2o3; tunneling oxide; charge storage; charge ... See more keywords