Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
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DOI: 10.1063/1.4996109
Abstract: The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical… read more here.
Keywords: tunneling paths; gate normal; tunneling field; effect transistors ... See more keywords