A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2939223
Abstract: A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (MN2) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during… read more here.
Keywords: reverse conducting; sub sub; sub; turn loss ... See more keywords
A Novel IGBT With High- ${k}$ Dielectric Modulation Achieving Ultralow Turn-Off Loss
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2964879
Abstract: A novel insulated gate bipolar transistor modulated by a high- ${k}$ dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during… read more here.
Keywords: igbt; novel igbt; turn loss; high dielectric ... See more keywords