A Simple Desaturation-Based Protection Circuit for GaN HEMT With Ultrafast Response
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DOI: 10.1109/tpel.2020.3040727
Abstract: Similar to other power semiconductors, gallium nitride enhancement-mode high-electron-mobility transistors (GaN E-HEMTs) require short-circuit protection (SCP) or overcurrent protection (OCP) in practical applications. However, the fast-switching characteristic of GaN introduces the challenge to the protection.… read more here.
Keywords: circuit; protection; turn stage; protection circuit ... See more keywords