A SiC gate turn-off thyristor with high di/dt for fast switching-on applications
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DOI: 10.1088/1361-6641/ac31e1
Abstract: High di/dt 4H-silicon carbide (SiC) gate turn-off thyristors (GTOs) are investigated and developed for fast switching-on application. This work has focused on accelerating the turn-on process to improve the di/dt characteristic, and the n-base dopant… read more here.
Keywords: fast switching; turn thyristor; sic gate; gate turn ... See more keywords