Articles with "type band" as a keyword



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2D anisotropic type-I SiS vdW heterostructures toward infrared polarized optoelectronics applications

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Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2020.147026

Abstract: Abstract Two-dimensional (2D) SiS has been drawing much attention due to its direct band gap and strong optical anisotropy under both two structural phases, namely, Pmma-SiS and Pma2-SiS. Here, we theoretically design Pmma-/Pma2-SiS van der… read more here.

Keywords: sis; pma2 sis; pmma pma2; band ... See more keywords
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Facile synthesis of BaMoO4 and BaMoO4/BaWO4 heterostructures with type -I band arrangement and enhanced photoluminescence properties

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Published in 2021 at "Advanced Powder Technology"

DOI: 10.1016/j.apt.2021.09.028

Abstract: Abstract A series of BaMoO4 and BaMoO4/BaWO4 phosphors were successfully prepared via a polyacrylamide gel method and low temperature calcination technology. The effects of sintering temperature and mass percentage of BaMoO4/BaWO4 on the phase purity,… read more here.

Keywords: bamoo4 bawo4; bamoo4; band arrangement; photoluminescence ... See more keywords
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Fully-depleted dual P–N heterojunction with type-II band alignment and matched build-in electric field for high-efficient photocatalytic hydrogen production

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Published in 2021 at "International Journal of Hydrogen Energy"

DOI: 10.1016/j.ijhydene.2021.08.175

Abstract: Abstract In this work, a dual p-n heterojunction of Cu2O/Ni(OH)2/TiO2 with type-II band alignment and matched build-in electric field was fabricated. This dual p-n heterojunction promoted the separation and transfer of charge carriers, which is… read more here.

Keywords: alignment matched; hydrogen; band alignment; heterojunction ... See more keywords

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics.

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Published in 2022 at "Nanoscale"

DOI: 10.1039/d2nr04165k

Abstract: Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting… read more here.

Keywords: anisotropic; sns inse; band alignment; low pressure ... See more keywords
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Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment

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Published in 2019 at "Physical Review B"

DOI: 10.1103/physrevb.99.195411

Abstract: The spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques… read more here.

Keywords: quantum dots; alas quantum; type band; direct indirect ... See more keywords
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Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

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Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13040729

Abstract: Exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment were studied. The negligible (less than 0.2 μeV) value of the anisotropic exchange interaction in these QDs… read more here.

Keywords: band; quantum dots; band gap; type band ... See more keywords