Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon
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DOI: 10.1007/s11664-018-6732-5
Abstract: We report a simple, time-saving and effective low-temperature approach to avoid the effect of intrinsic defects in n-type Czochralski silicon (Cz-Si) wafers. This approach consists of submitting Cz-Si wafers to two annealing steps. The first… read more here.
Keywords: low temperature; temperature; vacancy; step ... See more keywords
Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2018.2834944
Abstract: This paper investigates the potential of three different methods—tabula rasa (TR), phosphorus diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type Czochralski-grown upgraded metallurgical-grade (UMG) silicon samples. Our results show that the… read more here.
Keywords: lifetime type; czochralski grown; upgraded metallurgical; type ... See more keywords