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   Articles with "type defects" as a keyword



Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams

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recommendations! Published in 2017 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2017.08.021

Abstract: Abstract Vacancy-type defects in GaN with different carbon concentrations ([C] = 2 × 1016 − 1 × 1018 cm− 3) were probed using monoenergetic positron beams. 1.5-μm-thick GaN layers were grown on Si substrates by metalorganic vapor phase epitaxy. Measurements of Doppler broadening spectra and… read more here.

Keywords: positron; monoenergetic positron; type defects; using monoenergetic ... See more keywords

Transient Ruddlesden–Popper-Type Defects and Their Influence on Grain Growth and Properties of Lithium Lanthanum Titanate Solid Electrolyte

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recommendations! Published in 2024 at "ACS Nano"

DOI: 10.1021/acsnano.4c00706

Abstract: Lithium lanthanum titanate (LLTO) perovskite is one of the most promising electrolytes for all-solid-state batteries, but its performance is limited by the presence of grain boundaries (GBs). The fraction of GBs can be significantly reduced… read more here.

Keywords: type; grain growth; lithium lanthanum; lanthanum titanate ... See more keywords
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Passivation and dissociation of P b-type defects at a-SiO2/Si interface

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recommendations! Published in 2021 at "Chinese Physics B"

DOI: 10.1088/1674-1056/ac0e20

Abstract: It is well known that in the process of thermal oxidation of silicon, there are P b-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on… read more here.

Keywords: sio2 interface; type defects; passivation; passivation dissociation ... See more keywords

Nonlinear Ultrasonic C-Scan Imaging for Contact-Type Defects in Diffusion-Bonded Joints—A Case Study

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recommendations! Published in 2024 at "Materials"

DOI: 10.3390/ma17061288

Abstract: Diffusion bonding technology is widely used in the connection of precision components, yet accurately and reliably detecting contact-type defects on the bond interface still remains a significant problem. Nonlinear ultrasonic methods have been proven to… read more here.

Keywords: type defects; contact type; diffusion; nonlinear ultrasonic ... See more keywords

Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation

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recommendations! Published in 2017 at "Defect and Diffusion Forum"

DOI: 10.4028/www.scientific.net/ddf.373.183

Abstract: Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active… read more here.

Keywords: annihilation; type defects; defects gan; vacancy ... See more keywords