Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
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DOI: 10.1016/j.tsf.2017.08.021
Abstract: Abstract Vacancy-type defects in GaN with different carbon concentrations ([C] = 2 × 1016 − 1 × 1018 cm− 3) were probed using monoenergetic positron beams. 1.5-μm-thick GaN layers were grown on Si substrates by metalorganic vapor phase epitaxy. Measurements of Doppler broadening spectra and… read more here.
Keywords: positron; monoenergetic positron; type defects; using monoenergetic ... See more keywords
Passivation and dissociation of P b-type defects at a-SiO2/Si interface
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DOI: 10.1088/1674-1056/ac0e20
Abstract: It is well known that in the process of thermal oxidation of silicon, there are P b-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on… read more here.
Keywords: sio2 interface; type defects; passivation; passivation dissociation ... See more keywords
Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation
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DOI: 10.4028/www.scientific.net/ddf.373.183
Abstract: Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active… read more here.
Keywords: annihilation; type defects; defects gan; vacancy ... See more keywords