Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0231294
Abstract: In this Letter, time-dependent gate breakdown (TDB) characteristics under dynamic switching conditions were investigated in p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with either Schottky-type or Ohmic-type gates. The dynamic TDB of the Schottky-type devices increased with frequencies… read more here.
Keywords: algan gan; gan algan; dependent gate; type devices ... See more keywords
Characterization of an Electronic Nicotine Delivery System (ENDS) Aerosol Generation Platform to Determine Exposure Risks
Sign Up to like & getrecommendations! Published in 2023 at "Toxics"
DOI: 10.3390/toxics11020099
Abstract: Evaluating vaping parameters that influence electronic nicotine delivery system (ENDS) emission profiles and potentially hazardous exposure levels is essential to protecting human health. We developed an automated multi-channel ENDS aerosol generation system (EAGS) for characterizing… read more here.
Keywords: system; electronic nicotine; type devices; type ... See more keywords