First-principles prediction of n-type diamond: novel co-doped structure using N and Be impurities
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ad2be1
Abstract: To address the limitation of diamond-based electronic devices, a comprehensive study on n-type diamond is crucial. A novel dopant structure, nitrogen–beryllium co-doping, is proposed for achieving n-type doping. The dopant structure, electronic property, synthesis route… read more here.
Keywords: energy; structure; type; type diamond ... See more keywords
P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3485683
Abstract: P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been demonstrated on phosphorus-doped n-type diamond epilayers. The p-channel nature arises from the surface conductivity resulting from hydrogenated termination on the n-type diamond surface. The MOSFET exhibits normally-on properties… read more here.
Keywords: mosfets phosphorous; doped type; type diamond; diamond ... See more keywords