Articles with "type doping" as a keyword



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Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

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Published in 2018 at "Advanced materials"

DOI: 10.1002/adma.201706995

Abstract: Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results… read more here.

Keywords: precisely controllable; doping mote2; electrothermal doping; mote2 transistors ... See more keywords
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Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD

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Published in 2023 at "Advanced Materials"

DOI: 10.1002/adma.202209371

Abstract: Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n‐type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p‐type… read more here.

Keywords: mos2 lateral; nbs2 mos2; substitutional type; type doping ... See more keywords
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Study of p-type doping effect on P3HT: ICBA based organic photovoltaic solar cell performance

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Published in 2020 at "Optik"

DOI: 10.1016/j.ijleo.2019.163543

Abstract: Abstract In this work, we present a simulation study for p-type doping effect on the performance of a photovoltaic organic solar cell based on P3HT: ICBA. Thus, numerical simulations are investigated on ITO/PEDOT: PSS /P3HT:… read more here.

Keywords: doping effect; study type; solar cell; type doping ... See more keywords
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P-type doping in internally photoemitted hot carrier solar cells

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Published in 2021 at "Journal of Cleaner Production"

DOI: 10.1016/j.jclepro.2020.124168

Abstract: Abstract Hot carriers in hybrid perovskite have been proven to have eminent properties with long carrier cooling time and long carrier migration distance. The invention of the internally photoemitted hot carrier (IPHC) solar cell recently… read more here.

Keywords: hot carrier; type doping; doping internally; internally photoemitted ... See more keywords
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Influence of electron beam and ultraviolet irradiations on graphene field effect transistors

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Published in 2017 at "Optical Materials"

DOI: 10.1016/j.optmat.2017.06.039

Abstract: Abstract Electrical transport properties of graphene can be modulated by different controlled doping methods in order to make it useful for practical applications. Here we report a comparative study of electron-beam (e-beam) irradiated and ultraviolet… read more here.

Keywords: graphene field; type doping; effect transistors; field effect ... See more keywords
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p- and n-type Doping Effects on the Electrical and Ionic Conductivities of Li4Ti5O12 Anode Materials

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Published in 2018 at "Journal of Physical Chemistry C"

DOI: 10.1021/acs.jpcc.8b03995

Abstract: We systematically investigated p- and n-type doping effects on the electrical conductivity of spinel Li4Ti5O12 (LTO) by designing theoretically stoichiometric Li11Ti13O32 (p-type) and Li10Ti14O32 (n-type) because LTO has a nonstoichiometric (Li)8[Li8/3Ti40/3]O32 formula with the Fd3m… read more here.

Keywords: electrical conductivity; type doping; doping effects; effects electrical ... See more keywords
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p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements.

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Published in 2017 at "Nano letters"

DOI: 10.1021/acs.nanolett.6b04560

Abstract: GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was… read more here.

Keywords: nanowires characterized; gan nanowires; type doping; doping gan ... See more keywords
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Realizing Stable p-Type Transporting in Two-Dimensional WS2 Films.

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Published in 2017 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.7b03177

Abstract: Two-dimensional (2D) semiconductors have become promising candidates for nanoelectronics applications due to their unique layered structure and rich physical properties. However, the significant lack of reproducible p-type doping methods that can avoid the instability induced… read more here.

Keywords: stable type; two dimensional; ws2; type doping ... See more keywords
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p-Type Doping of Graphene with Cationic Nitrogen

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Published in 2019 at "ACS Applied Nano Materials"

DOI: 10.1021/acsanm.8b02237

Abstract: Tailoring electrical properties of graphene by nitrogen doping is currently of great significance in a broad area of advanced applications. Bonding configuration of nitrogen atoms in graphene plays a vital role in controlling its electrical,… read more here.

Keywords: cationic nitrogen; type doping; nitrogen; doping graphene ... See more keywords
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P-Type Doping of WS2 Quantum Dots via Pulsed Laser Ablation

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Published in 2018 at "ACS Photonics"

DOI: 10.1021/acsphotonics.8b00941

Abstract: Doping provides an advantage to engineering the optical and electrical characteristics of transition-metal dichalcogenides (TMDs). Here, we report the doping of WS2 quantum dots (QDs) with diethyle... read more here.

Keywords: ws2 quantum; type doping; doping ws2; dots via ... See more keywords
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Study of the heavily p-type doping of cubic GaN with Mg

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Published in 2020 at "Scientific Reports"

DOI: 10.1038/s41598-020-73872-w

Abstract: We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance… read more here.

Keywords: doping cubic; cubic gan; gan; type doping ... See more keywords