Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics.
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DOI: 10.1021/acs.nanolett.5c03444
Abstract: Achieving reversible n/p-type switching in two-dimensional semiconductors is crucial for reconfigurable nanoelectronic devices. Here, we demonstrate a fully reversible channel-type conversion in InSe-based transistors via ultraviolet-ozone oxidation and thermal annealing, enabling stable bidirectional polarity switching.… read more here.
Keywords: type engineering; reconfigurable electronics; type; inse based ... See more keywords