Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emission
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DOI: 10.1016/j.microrel.2018.11.008
Abstract: Abstract In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as… read more here.
Keywords: photon emission; bandgap; spectral photon; type finfets ... See more keywords