Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.06.208
Abstract: Abstract The effect of carbon impurities on electrical resistivity of Mg doped GaN grown by metal organic chemical vapor deposition (MOCVD) was investigated. It was noted that when the growth rate increases or the growth… read more here.
Keywords: resistivity; carbon; type gan; residual carbon ... See more keywords
Effects of Potassium Adsorption and Potassium–Water Coadsorption on the Chemical and Electronic Properties of n-Type GaN(0001) Surfaces
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b09512
Abstract: The interaction of n-type GaN(0001) surfaces with potassium and water is investigated using photoelectron spectroscopy, with special focus on adsorbate–substrate charge-transfer processes and water dissociation. Potassium atoms adsorb at the surface, forming a distinct surface… read more here.
Keywords: potassium; water; gan 0001; surface ... See more keywords
Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c21106
Abstract: The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic… read more here.
Keywords: ohmic contacts; contact; type gan; resistance ... See more keywords
Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5079673
Abstract: The growth of Mg-doped GaN over a wide doping range is demonstrated via pulsed sputtering deposition (PSD). All samples show p-type conductivity without any post-growth annealing, and their room temperature (RT) hole concentration can be… read more here.
Keywords: pulsed sputtering; range; type gan; via pulsed ... See more keywords
A distinctive architecture design of lateral p–n type GaN ultraviolet photodetectors via a numerical simulation
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/acd460
Abstract: The conventionally vertical p–n type gallium nitride (GaN)-based ultraviolet (UV) photodetectors (PDs) suffer from the drawbacks of insufficient light absorption in the depletion region, thus resulting in poor carrier separation efficiency. The architecture of lateral… read more here.
Keywords: type gan; lateral type; design; architecture ... See more keywords
A Novel Electrochemical Hydrogen Peroxide Sensor Based on AuNPs/n-Type GaN Electrode
Sign Up to like & getrecommendations! Published in 2020 at "Chemistry Letters"
DOI: 10.1246/cl.200124
Abstract: Gold nanoparticles (AuNPs) were in situ electrodeposited on n-type GaN (n-GaN) electrode via cyclic voltammetry for electrochemical sensing of hydrogen peroxide (H2O2). Detection results revealed t... read more here.
Keywords: hydrogen peroxide; gan electrode; type gan;
Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements
Sign Up to like & getrecommendations! Published in 2018 at "MRS Communications"
DOI: 10.1557/mrc.2018.51
Abstract: The electrochemical catalytic effects of the NiO islands and layer on n-type GaN were investigated. The NiO islands covered some parts of the GaN surface and were seen to improve photoanodic current and prevent photoanodic… read more here.
Keywords: band; water oxidation; type gan;
Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/1882-0786/aaf418
Abstract: This work quantitatively examined lateral diffusion of hydrogen in the (0001) in-plane direction in a Mg-doped p-type GaN layer sandwiched between n-type layers, based on the preparation and annealing of circular mesa structures having different… read more here.
Keywords: diffusion hydrogen; type gan; diffusion; lateral diffusion ... See more keywords