Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
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DOI: 10.1088/1674-4926/40/4/042101
Abstract: Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb… read more here.
Keywords: gasb single; gasb; lightly doped; acceptor defects ... See more keywords