Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds
Sign Up to like & getrecommendations! Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce01134f
Abstract: Germanium telluride (GeTe) is a very well known IV–VI group semiconducting material with the advantageous property of showing metallic conduction, which materializes from its superior carrier concentration (n) (high number of Ge vacancies). A systematic… read more here.
Keywords: thermoelectric properties; microscopy; ge0; xpxsb0 1te ... See more keywords
Realizing n-type gete through suppressing the formation of cation vacancies and bi-doping
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/38/12/127201
Abstract: It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole… read more here.
Keywords: cation vacancies; formation; type gete; thermoelectric performance ... See more keywords