Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
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DOI: 10.1063/1.5046827
Abstract: In0.53Ga0.47As p + n diodes with different densities of extended defects have been analyzed by detailed structural and electrical characterization. The defects have been introduced during Metal-Organic Vapor Phase Epitaxy (MOVPE) growth by using a lattice-mismatched layer… read more here.
Keywords: localized states; in0 53ga0; bandlike localized; extended defects ... See more keywords