Zn‐Doped P‐Type InAs Nanocrystal Quantum Dots
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202208332
Abstract: Doped heavy metal‐free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in… read more here.
Keywords: quantum dots; spectroscopy; type; nanocrystal quantum ... See more keywords
Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses
Sign Up to like & getrecommendations! Published in 2018 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-018-1528-7
Abstract: Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with… read more here.
Keywords: impact ionization; type inas; study impact; carlo study ... See more keywords
Transition levels of intrinsic defects in type-II InAs/InAs0.5Sb0.5 strained-layer superlattices
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5110165
Abstract: We report a first-principles study of the formation energies and transition energy levels of intrinsic point defects, including In and As vacancies, antisites, and interstitials, in the InAs and InAs0.5Sb0.5 regions of the type-II InAs/InAs0.5Sb0.5… read more here.
Keywords: levels intrinsic; inas inas0; type inas; transition levels ... See more keywords
Rearrangement of Electroluminescence Spectra in Type-II n-InAs/n-InAsSbP Heterostructures
Sign Up to like & getrecommendations! Published in 2018 at "Physics of the Solid State"
DOI: 10.1134/s1063783418030277
Abstract: Single heterostructures of type II n+-InAs/n0-InAs0.59Sb0.16P0.25, based on an intentionally undoped epitaxial layer with an electronic type of conductivity are obtained by metalorganic vapor phase epitaxy (MOVPE). In the heterostructure, a transition layer of modulated… read more here.
Keywords: type inas; electroluminescence spectra; spectra type; rearrangement electroluminescence ... See more keywords