Ab initio quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics
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DOI: 10.1039/d5ra06179b
Abstract: Recently, field-effect transistors (FETs) based on triple-layer InSe have been experimentally fabricated with a channel length of 10–20 nm. They show better performance than Si FETs in terms of transconductance and room-temperature ballistic ratio. Their… read more here.
Keywords: initio quantum; type inse; inse fets; inse ... See more keywords