A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures
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DOI: 10.1088/1361-6641/ac2af0
Abstract: Electronic transport properties of as-grown and thermally annealed n- and p-type modulation-doped GaAsBi/AlGaAs quantum well (QW) structures were investigated. Hall mobility of as-grown, n- and p-type modulation doped QW structures are found from raw experimental… read more here.
Keywords: temperature; mobility; electron mobility; modulation doped ... See more keywords