New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET.
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DOI: 10.1021/acsami.0c16563
Abstract: We report a novel approach for engineering tensely strained Si layers on a relaxed silicon germanium on insulator (SGOI) film using a combination of condensation, annealing, and epitaxy in conditions specifically chosen from elastic simulations.… read more here.
Keywords: type mosfet; engineering; temperature; strained layers ... See more keywords