SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss
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DOI: 10.3390/mi13020248
Abstract: A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the… read more here.
Keywords: mosfet; gate; switching loss; heterojunction ... See more keywords