Fermi level depinning in Ti/n-type Ge Schottky junction by the insertion of fluorinated graphene
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.04.174
Abstract: Abstract The effect of fluorinated graphene (f-Gr) as the interfacial layer on Fermi level depinning in Ti/n-type Ge Schottky barrier diodes (SBDs) is intensively studied. Electrical properties of the SBDs are characterized by I-V method.… read more here.
Keywords: type schottky; level depinning; fermi level; fluorinated graphene ... See more keywords
Epitaxy of NiTe2 on WS2 for the p-Type Schottky Contact and Increased Photoresponse.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c06968
Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have great potential applications in the electronic and optoelectronic devices. Nevertheless, due to the difficulty in the efficient doping of atomic-thickness TMDCs or Fermi level pinning (FLP) effects at… read more here.
Keywords: type schottky; ws2; epitaxy nite2; contact ... See more keywords
Tunable Schottky barrier in Janus-XGa2 Y/Graphene (X/Y = S, Se, Te; X ≠ Y) van der Waals heterostructures
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac800d
Abstract: Two-dimensional (2D) Janus materials have attracted significant attention due to their asymmetrical structures and unique electronic properties. In this work, by using the first-principles calculation based on density functional theory, we systematically investigate the electronic… read more here.
Keywords: schottky; graphene; type schottky; contact ... See more keywords