On the alloying and strain effects of divacancy energy level in n-type Si1 − xGex
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DOI: 10.1063/1.5126111
Abstract: Deep level transient spectroscopy was used to investigate point defects introduced by room temperature He-ion irradiation in both fully strained and partially relaxed phosphorous doped n-type Si1 − xGex films epitaxially grown on the Si (001) substrate… read more here.
Keywords: si1 xgex; level; spectroscopy; strain ... See more keywords