Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.06.019
Abstract: Abstract N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N–Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we… read more here.
Keywords: nitrogen; physical vapor; vapor transport; grown physical ... See more keywords
Ohmic contacts to n-type 3C-SiC using Cr/Ni/Au and Ni/Cr/Au metallizations
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111016
Abstract: Abstract The electrical characteristics of Cr/Ni/Au and Ni/Cr/Au contacts to n-type 3C-SiC have been examined using a two-contact circular test structure. In Ni/Cr/Au contacts with Ni as contact layer and Cr as intermediate layer, both… read more here.
Keywords: using metallizations; contacts type; layer; ohmic contacts ... See more keywords
Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113694
Abstract: Abstract The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at high temperature (from 900 °C to… read more here.
Keywords: temperature; high temperature; stable reliable; contact ... See more keywords
Spin transport in n-type 3C–SiC observed in a lateral spin-pumping device
Sign Up to like & getrecommendations! Published in 2020 at "Solid State Communications"
DOI: 10.1016/j.ssc.2019.113754
Abstract: Abstract 3C–SiC is a promising platform for semiconductor spintronics because it consists of light group-IV elements and has a zinc blende structure. To demonstrate spin transport in this attractive semiconductor, we conducted an experiment of… read more here.
Keywords: spin transport; transport; spin; transport type ... See more keywords
The relationship between the doping concentration and d0 ferromagnetism in n-type 4H-SiC
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0028458
Abstract: To date, research on defect-induced magnetism in SiC has been conducted to clarify the relationship between the ferromagnetic signal and the carrier concentration. It has been experimentally proven that there is an interaction between the… read more here.
Keywords: defect induced; doping concentration; concentration; relationship ... See more keywords
Time-resolved photoluminescence spectral analysis of phonon-assisted DAP and e-A recombination in N+B-doped n-type 4H-SiC epilayers
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/aaf8e9
Abstract: It is crucial to clarify the roles of phonon-assisted donor-acceptor pairs (DAPs) and free-to-acceptor (e-A) emissions in n-type 4H-SiC doped with nitrogen (N) and boron (B), where N and B induce the shallow donor and… read more here.
Keywords: time resolved; emission; recombination; resolved photoluminescence ... See more keywords
Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aade67
Abstract: Low temperature heteroepitaxy of cubic silicon carbide (3C-SiC) on silicon substrates is key to the low-cost and mass scale hetergeneous integration of 3C-SiC into the semiconductor market. Low temperature growth also opens up the opportunity… read more here.
Keywords: properties type; growth; electrical properties; type sic ... See more keywords
Effects of sacrificial oxidation on surface properties of n- and p-type 4H-SiC: implications for metal contact behaviors
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aaec45
Abstract: A comparative investigation on the effects of sacrificial oxidation (SO) on the surface properties of n- and p-type 4H-SiC has been conducted by using x-ray photoelectron spectroscopy and deep level transient spectroscopy. For n-type 4H-SiC,… read more here.
Keywords: type sic; surface; spectroscopy; effects sacrificial ... See more keywords
Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16093347
Abstract: We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD)… read more here.
Keywords: schottky barrier; barrier diodes; related defects; boron related ... See more keywords
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Sign Up to like & getrecommendations! Published in 2019 at "Micromachines"
DOI: 10.3390/mi10100629
Abstract: In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy… read more here.
Keywords: epitaxial layer; sic piezoresistors; cantilever beam; type ... See more keywords
Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC
Sign Up to like & getrecommendations! Published in 2021 at "Micromachines"
DOI: 10.3390/mi12020216
Abstract: In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve… read more here.
Keywords: temperature; high temperature; temperature pressure; sensor ... See more keywords